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Search: "[ keyword: Parasitic parameter ]" (2)
Complete loss distribution model of GaN HEMTs considering the influence of parasitic parameters
Shengwei Gao Jinrui Tian Xiaoyu Fu Yongxiao Li Bo Wang
Lixia Zhao
Vol. 24, No. 1, pp. 119-129, Jan. 2024
10.1007/s43236-023-00710-3
Lixia Zhao
Vol. 24, No. 1, pp. 119-129, Jan. 2024
10.1007/s43236-023-00710-3
Analysis of Switching Clamped Oscillations of SiC MOSFETs
Junji Ke Zongkui Xie Changjun Wei Xiang Cui
Vol. 18, No. 3, pp. 892-901, May 2018
10.6113/JPE.2018.18.3.892
Vol. 18, No. 3, pp. 892-901, May 2018
10.6113/JPE.2018.18.3.892